N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition

Author

Hatori, Nobuaki ; Mukaihara, Toshikazu ; Ohnoki, N. ; Mizutani, Akihiko ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan

fYear

1996

fDate

2-7 June 1996

Firstpage

386

Lastpage

387

Abstract

Summary form only given. It is expected that an n-type modulation-doped quantum well (QW) lasers can achieve a reduction in threshold current. In this report, we have demonstrated strained InGaAs-AlGaAs QW lasers employing the n-type modulation doping for reducing threshold current for the first time. The active region of QW lasers was grown by a low pressure metal organic chemical vapor deposition.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; InGaAs-AlGaAs; N-type modulation-doped; active region; low pressure metal organic chemical vapor deposition; metal organic chemical vapor deposition growth; n-type modulation doping; n-type modulation-doped quantum well lasers; strained InGaAs-AlGaAs QW lasers; strained InGaAs/AlGaAs quantum well lasers; threshold current; Capacitive sensors; Chemical lasers; Epitaxial layers; Indium gallium arsenide; Laser modes; Organic chemicals; Power lasers; Quantum well lasers; Tellurium; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864826