Multiple exposure interferometric lithography-a novel approach to nanometer structures

Author

Xiaolan Chen ; Zaidi, Saleem H. ; Brueck, Steven R. J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

390

Lastpage

391

Abstract

Summary form only given. Trends in both integrated circuit and flat-panel display manufacturing technologies require improvements in nanoscale lithography. In both fields, there is increasing demand for a cost-effective lithographic technique that can produce large fields (to -45 cm diagonal for displays) of nanoscale structures. Imaging optical lithographic techniques are approaching fundamental limits in resolution. Interferometric lithography, in contrast provides a very simple and inexpensive technique that features essentially unlimited depth-of-field patterns with critical dimensions (CD) as small as /spl Lambda//4 over very huge areas.

Keywords

flat panel displays; image resolution; integrated circuit technology; integrated circuit testing; light interferometry; lithography; nanotechnology; IC testing; cost-effective lithographic technique; critical dimensions; flat-panel display manufacturing technologies; fundamental limits; imaging optical lithographic techniques; integrated circuit manufacturing technologies; interferometric lithography; large fields; multiple exposure interferometric lithography; nanometer structures; nanoscale lithography; nanoscale structures; resolution; unlimited depth-of-field patterns; very huge areas; Conductors; Displays; Interference; Interferometric lithography; Manufacturing; Nanostructures; Optical imaging; Optical interferometry; Optical sensors; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864831