A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICs

Author

Yamane, Yasuro ; Ohhata, Masanobu ; Kikuchi, Hiroyuki ; Asai, Kazuyoshi ; Imai, Yuhki

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1991

fDate

10-14 July 1991

Firstpage

513

Abstract

A 0.2 mu m gate length GaAs IC technology is reported. This technology enables the fabrication of both digital and analog ICs using the same process. A 10 Gb/s decision circuit with a 130 mV sensitivity and 215 degrees phase margin, and an amplifier with a 20 dB gain and 13 GHz bandwidth were successfully fabricated using this unified process technology.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; gallium arsenide; integrated circuit technology; microwave amplifiers; 0.2 micron; 10 Gbit/s; 13 GHz; 130 mV; 20 dB; GaAs; IC technology; MESFET technology; amplifier; analog ICs; bandwidth; decision circuit; digital ICs; gain; gate length; phase margin; semiconductors; sensitivity; unified process technology; Analog integrated circuits; Bandwidth; Digital integrated circuits; FET integrated circuits; Fabrication; Gain; Gallium arsenide; High speed integrated circuits; Integrated circuit technology; MESFET integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147050

Filename

147050