DocumentCode
355129
Title
Theoretical calculation of gain for interdiffused GaAs/AlGaAs quantum well lasers
Author
Gomez-Alcala, Rafael ; Fraile-Pelaez, Francisco ; Esquivias, Ignacio
Author_Institution
ETSI Telecomunicacion, Vigo Univ., Spain
fYear
1996
fDate
2-7 June 1996
Firstpage
419
Lastpage
420
Abstract
Summary form only given. In this work we investigate for the first time to our knowledge, the influence of impurity-free interdiffusion on the modal gain of GaAs-Al/sub 0.2/Ga/sub 0.8/As SCH SQW lasers, including valence band mixing. Energy levels for the conduction and valence bands were calculated with the finite element method. The modal gain was calculated using the model of Aversa and Iizuka.
Keywords
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; laser theory; quantum well lasers; GaAs-Al/sub 0.2/Ga/sub 0.8/As; SCH SQW laser; finite element method; interdiffusion; modal gain; quantum well laser; valence band mixing; Charge carrier density; Electrons; Energy states; Gallium arsenide; Laser theory; Quantum mechanics; Quantum well lasers; Surface emitting lasers; Telecommunications; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-443-2
Type
conf
Filename
864866
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