A 1.57 W/mm GaAs-based MISFET for high-power and microwave-switching applications

Author

Smith, F.W. ; Chen, C.L. ; Mahoney, L.J. ; Manfra, M.J. ; Temme, D.H. ; Clifton, B.J. ; Calawa, A.R.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

643

Abstract

Reports the power and switching performance of a GaAs metal-insulator-semiconductor field-effect transistor (MISFET) made using low-temperature (LT) GaAs as the buffer layer and the gate insulator. An LT GaAs MISFET with a gate length L/sub g/ of 1.5 mu m delivered an output power density P/sub d/ of 1.57 W/mm with 4.4 dB gain and a power-added efficiency eta /sub PA/ of 27.3% at 1.1 GHz. This is the highest power density from a GaAs-based FET ever reported. The P/sub d/ and eta /sub PA/ of this device at 1.1 GHz are shown as a function of input power. More recently, the LT GaAs MISFET has also demonstrated switch performance at 1.3 GHz that is comparable to that of the best commercially available FET switches that the authors have tested.<>

Keywords

III-V semiconductors; insulated gate field effect transistors; power transistors; semiconductor switches; solid-state microwave devices; 1.1 GHz; 1.3 GHz; 4.4 dB; FET switches; GaAs; MISFET; buffer layer; gate insulator; gate length; metal-insulator-semiconductor field-effect transistor; microwave-switching applications; output power density; power-added efficiency; switching performance; Buffer layers; FETs; Gain; Gallium arsenide; Insulation; MISFETs; Metal-insulator structures; Power generation; Switches; Time of arrival estimation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147085

Filename

147085