DocumentCode
3551435
Title
Monolithic 38 GHz dielectric resonator oscillator
Author
Wilson, P.G.
Author_Institution
British Telecom Res. Lab., Ipswich, UK
fYear
1991
fDate
10-14 July 1991
Firstpage
831
Abstract
A 38 GHz monolithic DRO (dielectric resonator oscillator) incorporating a 0.3 micron HEMT (high electron mobility transistor) has been designed using a small-signal design procedure. Ten DROs have been tested, seven of which were found to be fully working at RF and gave output powers up to 0 dBm. The temperature coefficient of the frequency of oscillation was -2.1 ppm/ degrees C and the phase noise was -68 dBc/Hz at 100 kHz from carrier. The DRO is potentially inexpensive when produced in high volume and is suitable for a local oscillator in a broadband telecommunications system.<>
Keywords
MMIC; dielectric resonators; field effect integrated circuits; microwave oscillators; 0.3 micron; 38 GHz; HEMT; broadband telecommunications system; dielectric resonator oscillator; local oscillator; monolithic DRO; output powers; phase noise; small-signal design; temperature coefficient of frequency of oscillation; Circuits; Costs; Dielectrics; Frequency; Gallium arsenide; HEMTs; Oscillators; Phase noise; Reflection; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-87942-591-1
Type
conf
DOI
10.1109/MWSYM.1991.147135
Filename
147135
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