Title :
Extraction of FET model noise-parameters from measurement
Author_Institution :
Macallan Consulting, Milpitas, CA, USA
Abstract :
A rigorous noise-parameter extraction technique for MESFETs and HEMTs is presented. This technique analytically extracts the FET current noise-parameters (P, R, and C) from the measured scattering and noise parameters. This procedure does not require curve fitting, optimization, or simplified noise models. The matrix-based extraction method is derived and shown to be reasonably robust. The sensitivity of this technique to experimental error is discussed.<>
Keywords :
S-parameters; Schottky gate field effect transistors; electron device noise; field effect transistors; high electron mobility transistors; matrix algebra; semiconductor device models; solid-state microwave devices; FET model; HEMTs; MESFETs; matrix-based extraction method; noise-parameter extraction technique; scattering parameters; Circuit noise; Curve fitting; Data mining; FETs; Frequency; HEMTs; MODFETs; Matrix converters; Noise measurement; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147211
