Title :
Sheet resistance measurements of implanted layers on silicon wafers using a microwave resistivity probe
Author :
Wang, M.S. ; Bhimnathwala, H. ; Yao, S.S. ; Borego, J.M.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The authors present the use of microwave radiation at 35 GHz from an open-ended waveguide for measuring the sheet-resistance of implanted layers on high-resistivity silicon with dynamic range and spatial resolution comparable to those of four-point probes. The technique is capable of measuring implanted layers with doses in the range of 10/sup 12/ ions/cm/sup 2/ to 10/sup 16/ ions/cm/sup 2/.<>
Keywords :
electrical conductivity measurement; microwave measurement; silicon; 35 GHz; dynamic range; high resistivity Si; implanted Si wafers; implanted layers; microwave radiation; microwave resistivity probe; open-ended waveguide; semiconductors; spatial resolution; Conductivity; Electric resistance; Electrical resistance measurement; Microwave measurements; Microwave theory and techniques; Probes; Semiconductor waveguides; Silicon; Spatial resolution; Surface resistance;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147217
