Influence of insulation layers on the high-frequency properties of coplanar waveguides on Si

Author

Heiliger, N.-M. ; Pfeifer, Tom ; Vosseburger, M. ; Roskos, Hartmut G. ; Kurz, H.

Author_Institution

Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany

fYear

1996

fDate

2-7 June 1996

Firstpage

452

Abstract

Summary form only given. With the availability of Si/SiGe heterostructures, Si-based electronics is readily entering the 100-GHz frequency region. High-resistivity (>2000 /spl Omega/cm) Si appears as an attractive substrate material for SIMMWIC (Si-based MilliMeter-Wave Integrated Circuit) applications because of its low substrate losses. Substrate passivation needed for long-time stability and effective conductor insulation may strongly affect the electric properties of the surface. For circuit design, the exact knowledge of the altered characteristics of passivated Si substrates is essential. In this contribution, the characterization of coplanar waveguides (CPWs) an high-resistivity Si without insulation layer are compared with waveguides on Si/SiO/sub 2/ substrates.

Keywords

coplanar waveguides; elemental semiconductors; passivation; semiconductor-insulator boundaries; silicon; 100 GHz; SIMMWIC; Si-SiO/sub 2/; Si-based millimeter-wave integrated circuit; coplanar waveguide; high-frequency properties; high-resistivity silicon; insulation layer; substrate passivation; Circuit stability; Circuit synthesis; Conducting materials; Coplanar waveguides; Dielectrics and electrical insulation; Frequency; Germanium silicon alloys; Millimeter wave integrated circuits; Passivation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864913