Title :
Comparative study of stimulated emission in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N
Author :
Wiesmann, Dorothea ; Brener, Igal ; Khan, Muhammad Asad
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Summary form only given. GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. The high quantum efficiency of the LED produced by Nichia Chemical Ind. with an InGaN active layer draws a special interest on that alloy. We have measured the stimulated emission for different InGaN samples and compared the determined threshold with those for GaN and AlGaN samples. The samples were grown by a MOCVD system.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; optical films; photoluminescence; semiconductor growth; semiconductor lasers; stimulated emission; ultraviolet spectra; vapour phase epitaxial growth; visible spectra; Al/sub x/Ga/sub 1-x/N; AlGaN; GaN; In/sub x/Ga/sub 1-x/N; InGaN; InGaN active layer; LED; MOCVD; Nichia Chemical Ind.; high quantum efficiency; laser diode; near-UV spectral range; related alloys; stimulated emission; Aging; Aluminum gallium nitride; Degradation; Diode lasers; Gallium nitride; Laser excitation; Light emitting diodes; Photoluminescence; Solids; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
