Epitaxial semiconductor devices

The ability to grow epitaxial films of germanium and silicon on substrates of these materials permits major improvements in the performance of semiconductor devices. In this paper the design of transistors and diodes using epitaxial film material is discussed, together with predictions of the improvements in performance that may be obtained. A brief description is given of the pertinent properties of films deposited epitaxially on germanium and silicon substrates and of the techniques used in the fabrication of epitaxial devices. Experimental results are given on the performance of epitaxial diffused transistors made by these techniques from both germanium and silicon.