Threshold current density in optimized UV diode lasers based on gallium nitride

Author

Eliseev, P.G. ; Smagley, V.G. ; Osinski, M.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

457

Lastpage

458

Abstract

Summary form only given. In this work, a theoretical analysis is performed of GaN spontaneous emission and gain spectra and of radiative recombination rate in function of excess carrier density N. Contribution of nonradiative recombination in published photopumping data is estimated. A nonparabolic band model is used with several values of electron and hole effective masses and intraband relaxation times (from 26 to 500 fs) that span the range of reported or expected values of these parameters.

Keywords

III-V semiconductors; carrier density; current density; gallium compounds; ion recombination; laser theory; optical pumping; semiconductor lasers; spontaneous emission; ultraviolet spectra; 26 to 500 fs; GaN; GaN spontaneous emission; UV gain spectra; electron effective masses; excess carrier density; gallium nitride; hole effective masses; intraband relaxation times; nonparabolic band model; nonradiative recombination; optimized UV diode lasers; photopumping data; radiative recombination rate; theoretical analysis; threshold current density; Charge carrier density; Charge carrier processes; Diode lasers; Gallium nitride; III-V semiconductor materials; Performance analysis; Performance gain; Radiative recombination; Spontaneous emission; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864920