Comparison of Zn and Mg incorporation in MOVPE InP/GaInAsP laser structures

Author

Veuhoff, E. ; Baumeister, H. ; Rieger, J. ; Gorgel, M. ; Treichler, R.

Author_Institution

Siemens Res. Lab., Munich, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

72

Lastpage

75

Abstract

The incorporation processes of Zn and Mg in InP and related ternary and quaternary layers for long wavelength laser applications are compared. It is shown that in InP above a critical concentration of (1-2)×10¹⁸ cm^-3 a sudden onset of dopant diffusion during growth is observed for Zn and Mg. This diffusion during growth can be markedly reduced by counter-doping with Si (Fermi level effect). Below the critical concentration Zn dopant profiles exhibit the same steep flanks as Mg dopant profiles suggesting the same low diffusion coefficients. Zn appears to be more suitable for p-type doping of InP, GaInAs, and GaInAsP, because accurate control of the dopant level in the epitaxial layers is easier to achieve with Zn than with Mg

Keywords

III-V semiconductors; diffusion in solids; doping profiles; gallium arsenide; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; Fermi level effect; III-V semiconductors; InP-GaInAsP laser structures; InP:Mg; InP:Zn; MOVPE; counter-doping; critical concentration; diffusion during growth; dopant diffusion; dopant incorporation comparison; doping profiles; epitaxial layers; long wavelength laser; p-type doping; quaternary layers; ternary layers; Doping; Epitaxial growth; Epitaxial layers; Fluid flow measurement; Gain measurement; Indium phosphide; Laboratories; Laser applications; Temperature dependence; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147296

Filename

147296