Protection of InP epi-ready wafers by controlled oxide growth

Author

Gallet, D. ; Gendry, M. ; Hollinger, G. ; Overs, A. ; Jacob, G. ; Boudart, B. ; Gauneau, M. ; L´Haridon, H. ; Lecrosnier, D.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1991

fDate

8-11 Apr 1991

Firstpage

85

Lastpage

88

Abstract

The quality of thermally cleaned InP (100) surfaces and that of GaInAs and InP layers subsequently grown by molecular beam epitaxy (MBE) are analyzed to assess the potential of two epi-ready oxidation procedures. GaInAs/InP structures were fabricated using a multichamber integrated UHV system combining a MBE reactor and a VWS surface analysis chamber with high resolution X-ray photoelectron spectroscopy (XPS) facilities. It is shown that by protecting thin oxide layers grown by thermal or UV oxidation on epi-ready InP wafers. the preparation of clean substrate surfaces prior to MBE growth can be achieved without any additional chemical cleaning by the grower. Results concerning substrate morphologies, oval defect density in epitaxial layers and interface contaminations compare favorably with results obtained using conventional wet chemical cleaning procedures

Keywords

III-V semiconductors; X-ray photoelectron spectra; indium compounds; molecular beam epitaxial growth; oxidation; semiconductor epitaxial layers; semiconductor growth; surface treatment; (100) surfaces; GaInAs-InP structures; III-V semiconductor; InP layers; MBE growth; clean substrate surfaces; controlled oxide growth; epi-ready oxidation procedures; epi-ready wafers; high resolution X-ray photoelectron spectroscopy; interface contaminations; layer protection; oval defect density; substrate morphologies; thermally cleaned; Chemicals; Indium phosphide; Inductors; Molecular beam epitaxial growth; Oxidation; Protection; Spectroscopy; Substrates; Surface cleaning; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147299

Filename

147299