Second-harmonic generation in biased GaAs/AlGaAs quantum well

Author

Fiore, A. ; Rosencher, E. ; Berger, V. ; Nagle, J.

Author_Institution

Lab. Central de Recherches, Thomson-CSF, Orsay, France

fYear

1996

fDate

2-7 June 1996

Firstpage

464

Abstract

Summary form only given. Second-harmonic susceptibility of asymmetric or electrically biased GaAs/AlGaAs quantum wells (QWs) can be exploited to realize frequency-conversion devices in the near-infrared. The calculated /spl xi//sup (2/) values associated with interband transitions are in the range of 10-20 pm/V. In this paper we have measured the /spl xi//sup (2/) in biased symmetric QWs, where the QW nonlinearity can be electrically switched on and off, so that synchronous detection of second harmonic (SH) generated by the QWs alone can be performed.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optical susceptibility; optical harmonic generation; semiconductor quantum wells; GaAs-AlGaAs; biased symmetric quantum well; interband transition; near-infrared frequency-conversion device; nonlinearity; second order optical susceptibility; second-harmonic generation; synchronous detection; Electric variables measurement; Frequency; Gallium arsenide; Nonlinear optics; Optical filters; Polarization; Quantum mechanics; Signal generators; Substrates; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864929