Theoretical and experimental studies of the effects of strain on the performance of InP/InGaAs SCH-MQW lasers

Author

Nichols, D. ; Sherwin, M. ; Munns, G. ; Pamulapati, J. ; Loehr, J. ; Singh, J. ; Bhattacharya, P. ; Ludowise, M. ; Chan, E. ; Fu, R.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

146

Lastpage

149

Abstract

Theoretical studies of the effects of biaxial strain on the performance of InP/InGaAs/InGaAsP multiple quantum well separate confinement heterostructure (MQW-SCH) lasers are discussed. The devices are found to exhibit characteristics that agree with predicted trends. No minimum in the threshold density curve has been found. The best devices exhibited threshold current densities of 689 A/cm², internal quantum efficiencies of approximately unity and loss coefficients of approximately 5.6 cm^-1

Keywords

III-V semiconductors; gallium arsenide; indium compounds; piezo-optical effects; semiconductor junction lasers; III-V semiconductor; InP-InGaAs lasers; SCH-MQW lasers; biaxial strain; internal quantum efficiencies; performance; threshold current densities; threshold density curve; Capacitive sensors; Effective mass; Eigenvalues and eigenfunctions; Indium gallium arsenide; Indium phosphide; Photonic band gap; Strain measurement; Tensile strain; Tensile stress; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147315

Filename

147315