Integrated devices for hybrid circuits

This paper describes the primary properties and characteristics of silicon planar integrated devices as they are applied to hybrid integrated circuits. An integrated device is defined as an individual component formed by the same techniques as required for components in a single substrate. In the hybrid circuits, electrical isolation is obtained by physical separation of the integrated devices. A description is given of the planar integrated construction of resistors, both thin film and diffused types, capacitors, both junction and film types, inductors, diodes and transistors, along with illustrations of typical units. The electrical characteristics are discussed, both the maximum ratings and the range of values of the devices. To illustrate the parasitic effects due to the integrated type of construction, equivalent circuits are given for both the resistors and capacitors. The application of these integrated devices in a typical circuit is also illustrated.