Characterization of InP and related materials by light scattering and photoluminescence

Author

Steigmeier, E.F. ; Auderset, H. ; Epler, J.E.

Author_Institution

Paul Scherrer Inst., Zurich, Switzerland

fYear

1991

fDate

8-11 Apr 1991

Firstpage

200

Lastpage

203

Abstract

The characterization of semi-insulating InP by means of light scattering (LST) and photoluminescence (PLT) topography and by Raman scattering is discussed. For n-type material wafer uniformity maps of saturation photoluminescence and trap filling time are presented. For InGaAsP layers on InP, the LST map is shown to correlate with device performance. For GaAs, examples in which the maps for near-bandgap (1.49 eV) and for midgap (0.8 eV) photoluminescence are in exact anticorrelation are presented

Keywords

III-V semiconductors; Raman spectra of inorganic solids; gallium arsenide; impurity electron states; indium compounds; light scattering; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; GaAs wafer; III-V semiconductors; InGaAsP-InP; InP; NDE; Raman scattering; device performance; epitaxial layers; layer quality; light scattering; n-type material; photoluminescence topography; saturation photoluminescence; semi-insulating; trap filling time; wafer uniformity maps; Etching; Filling; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Light scattering; Materials reliability; Photoluminescence; Raman scattering; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147336

Filename

147336