Screening, band filling and band-gap renormalization in piezoelectric quantum well systems

Author

Chen, Xia ; Molloy, C.H. ; Cooper, Clint ; Woolf, D.A. ; Westwood, D. ; Somerford, D.J. ; Blood, P.

Author_Institution

Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK

fYear

1996

fDate

2-7 June 1996

Firstpage

473

Lastpage

474

Abstract

Summary form only given. InGaAs/GaAs strained-layer quantum well structures grown on non-(001) oriented substrates are of fundamental interest for a variety of nonlinear optical elements. We have studied the low-temperature photoluminescence of InGaAs/GaAs (111)B single quantum well structures with 25% Indium mole fraction. The combination of band-gap narrowing and screening of the internal fields leads to complex-carrier-induced nonlinearities in this piezoelectric system.

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; photoluminescence; piezoelectric semiconductors; semiconductor quantum wells; InGaAs-GaAs; band filling; band-gap renormalization; low-temperature photoluminescence; nonlinear optics; piezoelectric quantum well; screening; strained layer; Electrons; Filling; Gallium arsenide; Laser modes; Oxidation; Photonic band gap; Radiative recombination; Raman scattering; Spontaneous emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864946