• DocumentCode
    3552147
  • Title

    Electrical and optical properties of Ni3+ in p-type InP

  • Author

    Korona, K. ; Bremond, G. ; Hennel, A.M.

  • Author_Institution
    Inst. of Exp. Phys., Warsaw Univ., Poland
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    323
  • Lastpage
    326
  • Abstract
    Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni3+ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni3+ to Ni2+ transition was found
  • Keywords
    III-V semiconductors; deep level transient spectroscopy; electrical conductivity of crystalline semiconductors and insulators; impurity and defect absorption spectra of inorganic solids; indium compounds; nickel; DLOS; InP:Ni; Ni2+ state; Ni3+ state; activation energy; deep level optical spectroscopy; hole capture cross-section; optical absorption; optical photoionization cross-section; optical properties; p-type; single acceptor level; Absorption; Gold; Indium phosphide; Ionization; Nickel; Ohmic contacts; Optical materials; Semiconductor materials; Spectroscopy; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147363
  • Filename
    147363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552147