Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS

Author

Knauer, A. ; Staske, R. ; Kräusslich, J. ; Kittner, R.

Author_Institution

Zentralinst. fur Opt. und Spektroskopie, Berlin, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

327

Lastpage

330

Abstract

Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of ⟨111⟩ grown liquid encapsulated Czochralski (LEC) crystals. Strain gradients and mismatch problems are taken into consideration

Keywords

III-V semiconductors; doping profiles; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor junctions; InP substrates; InP-InGaAsP; doping concentration; double heterostructures; lattice dilatation; lattice mismatch; lattice parameter measurement; lattice parameter variations; material properties; mismatch problems; photoluminescence measurements; semiconductors; strain gradients; Capacitive sensors; Crystals; Impurities; Indium phosphide; Lattices; Material properties; Semiconductor device doping; Strain measurement; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147364

Filename

147364