DocumentCode
3552159
Title
Symmetrical silicon epitaxial transistors
Author
Sasaki, Innan
Volume
9
fYear
1963
fDate
1963
Firstpage
96
Lastpage
98
Abstract
A symmetrical silicon mesa transistor, which has high symmetry of current gains and low saturation resistance and is very useful in certain switching circuits, is fabricated by utilizing the latest techniques. A p-type wafer with very low resistivity is used as the collector of the transistor, an n-type epitaxial layer grown on the wafer as the base and a p-type region diffused into the layer as the emitter.
Keywords
Cities and towns; Conductivity; Electric resistance; Epitaxial layers; Impurities; Lead compounds; Metallization; Protection; Silicon; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1963 International
Type
conf
DOI
10.1109/IEDM.1963.187415
Filename
1473640
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