• DocumentCode
    3552159
  • Title

    Symmetrical silicon epitaxial transistors

  • Author

    Sasaki, Innan

  • Volume
    9
  • fYear
    1963
  • fDate
    1963
  • Firstpage
    96
  • Lastpage
    98
  • Abstract
    A symmetrical silicon mesa transistor, which has high symmetry of current gains and low saturation resistance and is very useful in certain switching circuits, is fabricated by utilizing the latest techniques. A p-type wafer with very low resistivity is used as the collector of the transistor, an n-type epitaxial layer grown on the wafer as the base and a p-type region diffused into the layer as the emitter.
  • Keywords
    Cities and towns; Conductivity; Electric resistance; Epitaxial layers; Impurities; Lead compounds; Metallization; Protection; Silicon; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1963 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1963.187415
  • Filename
    1473640