LEC-growth and characterization of n- and p-type Fe-doped InP

Author

Mosel, F. ; Seidl, A. ; Hofmann, D. ; Muller, G.

Author_Institution

Inst. fur Werkstoffwissenschaften, Erlangen Univ., Nurnberg, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

331

Lastpage

334

Abstract

The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor

Keywords

III-V semiconductors; crystal growth from melt; electrical conductivity of crystalline semiconductors and insulators; indium compounds; iron; semiconductor doping; semiconductor growth; tellurium; zinc; Hall effect measurements; InP:Fe; InP:Fe,Te; InP:Fe,Zn; LEC-growth; characterization; co-doping; deep donor; electronic transport properties; liquid encapsulated Czochralski; n-type InP:Fe; optical analysis; p-type InP:Fe; partial compensation; semiconductors; theoretical calculations; Absorption; Atomic measurements; Chemical analysis; Crystals; Doping; Hall effect; Indium phosphide; Iron; Tellurium; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147365

Filename

147365