• DocumentCode
    3552202
  • Title

    Temperature dependency of incoherent and coherent radiation in GaAs diodes

  • Author

    Gonda, T. ; Junker, H. ; Lamorte, M.F. ; Nyul, P.

  • Author_Institution
    Radio Corporation of America, Somerville, New Jersey
  • Volume
    10
  • fYear
    1964
  • fDate
    1964
  • Firstpage
    38
  • Lastpage
    40
  • Abstract
    The temperature behavior of GaAs luminescent diodes varies widely. We show that the degradation of the incoherent radiation with increasing temperature is not constant, the slope is a function of temperature, and this functional dependence is not the same for all classes of diodes. For one extreme class of diodes the ratio of power output at 77°K to 300°K is in the ratio of 5:1 while for the other extreme class the ratio is 100:1. In most cases the rate of degradation in the neighborhood of 77°K is considerably greater than at elevated temperatures. The slope of the power versus temperature curve at 77°K may be greater by one order of magnitude than that at 300° K. For the temperature range greater than 150° K, the slope is more or less constant for all diodes. The rate of degradation at 77°K is independent of the value of efficiency at 77°K.
  • Keywords
    Coupling circuits; Degradation; Diode lasers; Gallium arsenide; Optical losses; Optical materials; Stimulated emission; Temperature dependence; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1964 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1964.187459
  • Filename
    1473856