DocumentCode
3552202
Title
Temperature dependency of incoherent and coherent radiation in GaAs diodes
Author
Gonda, T. ; Junker, H. ; Lamorte, M.F. ; Nyul, P.
Author_Institution
Radio Corporation of America, Somerville, New Jersey
Volume
10
fYear
1964
fDate
1964
Firstpage
38
Lastpage
40
Abstract
The temperature behavior of GaAs luminescent diodes varies widely. We show that the degradation of the incoherent radiation with increasing temperature is not constant, the slope is a function of temperature, and this functional dependence is not the same for all classes of diodes. For one extreme class of diodes the ratio of power output at 77°K to 300°K is in the ratio of 5:1 while for the other extreme class the ratio is 100:1. In most cases the rate of degradation in the neighborhood of 77°K is considerably greater than at elevated temperatures. The slope of the power versus temperature curve at 77°K may be greater by one order of magnitude than that at 300° K. For the temperature range greater than 150° K, the slope is more or less constant for all diodes. The rate of degradation at 77°K is independent of the value of efficiency at 77°K.
Keywords
Coupling circuits; Degradation; Diode lasers; Gallium arsenide; Optical losses; Optical materials; Stimulated emission; Temperature dependence; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1964 International
Type
conf
DOI
10.1109/IEDM.1964.187459
Filename
1473856
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