Reliability issues of InAlAs/InGaAs high-electron-mobility transistors

Author

Tutt, M. ; Ng, G.I. ; Pavlidis, D. ; Mansfield, J.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

349

Lastpage

352

Abstract

The effects of thermally stressing submicron In_xGa_1-xAs/InAlAs/InP (x⩾0.53) HEMTs for storage periods of up to 100 h at 200°C are discussed. DC characteristics are found to degrade. I_DSS decreased from 299 mA/mm to 182 mA/mm. G_m decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f_T and f_max decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Ω-mm to 0.26 Ω-mm. Results of X-ray analysis and Hall characterization are presented

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; reliability; solid-state microwave devices; thermal stresses; 100 C; 100 h; DC characteristics; HEMTs; Hall characterization; In_xGa_1-xAs-InAlAs-InP; X-ray analysis; microwave performance; ohmic contacts; reliability issues; semiconductors; thermal stress; thermally stressing; Decision support systems; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave measurements; Ohmic contacts; Thermal degradation; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147388

Filename

147388