Novel InP-channel HEMTs grown by organometallic vapor phase epitaxy

Author

Aina, L. ; Mattingly, M. ; Burgess, M. ; Hempfling, E. ; Meerschaert, A. ; Connor, J. M O

Author_Institution

Allied-Signal Aerosp. Co., Columbia, MD, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

381

Lastpage

384

Abstract

The growth and fabrication of high performance InP-channel HEMTs with transconductances as high as 335 mS/mm, low output conductances of 6 mS/mm, and high terminal breakdown voltages are discussed. It is shown that the AlInAs HEMTs have microwave gains as high as 8 dB at 30 GHz with f_T and f_max of 38 and 97 GHz. The device operate as power HEMTs at 18 GHz and exhibit power outputs of 0.34 W/mm and efficiencies of 26%. The results and estimated maximum achievable power output of 1.3 W/mm demonstrate the potential of the AlInAs/InP HEMT for power microwave applications

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 18 to 97 GHz; 26 percent; 8 dB; AlInAs-InP; InP-channel; OMVPE; breakdown voltages; efficiencies; fabrication; maximum achievable power output; microwave gains; organometallic vapor phase epitaxy; output conductances; power HEMTs; power microwave; power outputs; semiconductors; transconductances; Aerospace materials; Electron mobility; Epitaxial growth; Fabrication; HEMTs; Indium phosphide; MODFETs; Microwave devices; Synchronous digital hierarchy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147395

Filename

147395