• DocumentCode
    3552264
  • Title

    Monolithically integrated In0.60Ga0.47As/In 0.52Al0.48As/InP photoreceivers with submicron devices

  • Author

    Lai, R. ; Bhattacharya, P.K. ; Pavlidis, D.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    407
  • Lastpage
    410
  • Abstract
    The performance characteristics of planar InP-based PIN-MODFET front-end photoreceivers realized by molecular beam epitaxial regrowth are discussed. The full width at half maximum (FWHM) of the temporal response to photoexcitation for the full circuit is shown to be 60 ps, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 Ω is 15.0 GHz
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; receivers; 15 GHz; 33 ohm; 6.5 GHz; 60 ps; In0.60Ga0.40As-In0.52Al0.48 As-InP; InP substrate; OEIC; PIN-MODFET front-end photoreceivers; bandwidth; frequency response; molecular beam epitaxial regrowth; performance characteristics; semiconductors; submicron devices; temporal response; Capacitance; Circuits; Electric variables measurement; Electrical resistance measurement; Indium phosphide; Optical pulses; PIN photodiodes; Resistors; Space vector pulse width modulation; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147399
  • Filename
    147399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552264