Influence of the well composition and thickness in the GaInP/InP/GaInAs/InP structure for HEMT

Author

Loualiche, S. ; Le Corre, A. ; Salaun, S. ; Durel, S. ; Lecrosnier, D. ; Guillemot, C. ; Vaudry, C. ; Henry, L.

fYear

1991

fDate

8-11 Apr 1991

Firstpage

434

Lastpage

437

Abstract

Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related to the presence of aluminum in HEMT structures. An extremely high indium concentration is used in the well to improve its performance. The InAs well degrades above 10 Å thickness. It is shown that the best experimental results are obtained with a 60 Å GaInAs well (82% InAs) with 2% lattice mismatch

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; 60 A; GSMBE; GaInP-InP-GaInAs-InP; HEMT; Hall effect; I-V characteristics; MBE; experimental results; gas source molecular beam epitaxy; lattice mismatch; semiconductors; Conducting materials; Effective mass; HEMTs; Hall effect; Indium phosphide; Lattices; Molecular beam epitaxial growth; Oxidation; Photoluminescence; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147406

Filename

147406