Design, fabrication, and characterization of the double-barrier, reservoir, and quantum well electron tranfer modulator

Author

Monnard, R. ; Rudra, Atri ; Brocard, E. ; Miles, Redfern ; Jouneau, P.-H. ; Berrocosa, J. ; Dupertuis, M.A. ; Sadeghi, A. ; Dwir, Benjamin ; Reinhart, F.K. ; Wang, Jiacheng ; Leburton, J.P.

Author_Institution

Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland

fYear

1996

fDate

2-7 June 1996

Firstpage

489

Lastpage

490

Abstract

Summary form only given. We present data of an enhanced version of the BRAQWET, where an additional 70-/spl Aring/ InP barrier layer has been added between the reservoir and the quantum well. This additional barrier serves to increase the confinement of the wavefunction to the quantum well. For this reason we refer to this new structure as DBRAQWET, to signify the presence of a double barrier. Optical simulations employing a Poisson-Schrodinger self-consistent scheme shows clearly the increase in absorption and the accompanying increase in differential absorption.

Keywords

electro-optical modulation; semiconductor quantum wells; DBRAQWET; InP; Poisson-Schrodinger self-consistent method; differential absorption; double-barrier reservoir and quantum well electron tranfer modulator; optical simulation; Absorption; Bleaching; Current density; Electrons; Fabrication; Indium phosphide; Numerical simulation; Photonic band gap; Reservoirs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864966