Highly uniform InGaAlP/InGaP/GaAs structures by low pressure MOVPE

Author

McKee, M.A. ; Stall, R.A. ; Rose, B.C. ; Kim, J.Y. ; Lee, J.H. ; Bang, D.S. ; Kim, J.R. ; Inn, Y.H. ; Lee, S.H. ; Cho, Yung L.

Author_Institution

Emcore Corp., Somerset, NJ, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

460

Lastpage

463

Abstract

High-quality In_0.5Ga_0.5P and InGaAlP layers have been grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE) in a vertical, high-speed rotating-disk reactor. The three most important areas of uniformity investigated were thickness, doping, and wavelength. Highly uniform films were obtained both on a single 50-mm-diameter wafer at the center of a 5-in-diameter wafer carrier and on three 50-mm-diameter GaAs wafers symmetrically placed on a 5-in-diameter carrier. The effects of temperature and V/III ratio on morphology and composition are discussed. Initial results on InGaAlP/InGaP DH lasers are presented

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 50 mm; DH lasers; GaAs wafers; InGaAlP-InGaP-GaAs; doping uniformity; high-speed rotating-disk reactor; low pressure MOVPE; morphology; semiconductors; temperature effects; thickness uniformity; uniform films; vertical reactor; wavelength uniformity; Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hydrogen; Inductors; Surface morphology; Temperature; Thickness measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147412

Filename

147412