DocumentCode
3552345
Title
MOS resistor - A monolithic approach to high value resistance
Author
Vadasz, L.
Author_Institution
Fairchild Semiconductor, Palo Alto, Calif.
fYear
1965
fDate
20-22 Oct. 1965
Firstpage
37
Lastpage
37
Abstract
The basic MOS structure can be utilized for designing resistors with resistivities in the range of 7 - 25 Kohm/square. The gate induced surface inversion layer is used for the resistor body, while the source and drain regions will be the end terminals. Device characteristics will depend on the biasing conditions. Various modes of operations are studied. Typical modes of operations are (a) constant source to bulk bias and (b) constant drain to bulk bias. Analytical expressions are generated to describe the current-voltage characteristics of these conditions. The analysis is extended to include more general situations of device operation.
Keywords
Character generation; Current-voltage characteristics; Flexible printed circuits; Linearity; MOSFET circuits; Manufacturing; Resistors; Size control; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1965 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1965.187571
Filename
1474152
Link To Document