• DocumentCode
    3552371
  • Title

    A survey of second breakdown

  • Author

    Schafft, H.A. ; French, J.C.

  • Author_Institution
    National Bureau of Standards, Washington, D. C.
  • Volume
    11
  • fYear
    1965
  • fDate
    1965
  • Firstpage
    46
  • Lastpage
    46
  • Abstract
    The existence of a "new high current mode of transistor operation", now generally known as second breakdown, was first reported by Thornton and Simmons in 1958 and was used to explain the mysterious failures that were observed to occur under certain operating conditions. Since then, with the production of higher power and higher frequency transistors, the problems resulting from the existence of second breakdown have proliferated. Interest in the phenomenon has grown concurrently and many papers about second breakdown can be found in the literature. These papers cover a range of interest that extends from theoretical studies of the basic mechanisms involved to interpretations of specifications for transistor operation free of second breakdown. A complete understanding of second breakdown has not yet been achieved and several concepts of second breakdown prevail. The purpose of this paper is to review the work that has been reported in order to present a coherent and comprehensive picture of the present status of second breakdown.
  • Keywords
    Breakdown voltage; Charge carriers; Couplings; Electric breakdown; Frequency; Lattices; NIST; Production; Temperature dependence; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1965 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1965.187595
  • Filename
    1474176