DocumentCode
3552408
Title
Surface InAs/InP quantum wells: epitaxial growth and characterization
Author
Tabata, A. ; Benyattou, T. ; Guillot, G. ; Sobiesierski, Z. ; Clark, S.A. ; Williams, R.H. ; Gendry, M. ; Hollinger, G. ; Viktorovitch, P.
Author_Institution
LPM, CNRS, Villeurbanne, France
fYear
1991
fDate
8-11 Apr 1991
Firstpage
496
Lastpage
499
Abstract
The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states
Keywords
III-V semiconductors; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; InAs surface states; InAs-InP; MBE; epitaxial growth; photoluminescence; quantum well; semiconductors; structural properties; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Pollution measurement; Substrates; Surface contamination; Surface morphology; Surface reconstruction; Surface treatment; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147421
Filename
147421
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