DocumentCode
3552425
Title
US research activities on InP-based microwave and millimeter-wave devices and circuits
Author
Shupe, Dave ; Fathimulla, Ayub ; Aina, Leye
Author_Institution
Allied-Signal Aerosp. Technol. Center. Columbia, MD, USA
fYear
1991
fDate
8-11 Apr 1991
Abstract
The history and current research status of microwave and millimeter-wave devices and circuits on InP substrates are outlined. The development of InGaAs/InAlAs MODFETs is reviewed. Future research in GaAs and InP solid-state technology is discussed
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; reviews; solid-state microwave circuits; solid-state microwave devices; III-V semiconductors; InGaAs-InAlAs devices; InP; MODFET; USA research; microwave circuits; microwave devices; millimeter-wave circuits; millimeter-wave devices; History; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFET circuits; Microwave circuits; Microwave devices; Millimeter wave circuits; Millimeter wave devices; Millimeter wave technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147432
Filename
147432
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