Title :
US research activities on InP-based microwave and millimeter-wave devices and circuits
Author :
Shupe, Dave ; Fathimulla, Ayub ; Aina, Leye
Author_Institution :
Allied-Signal Aerosp. Technol. Center. Columbia, MD, USA
Abstract :
The history and current research status of microwave and millimeter-wave devices and circuits on InP substrates are outlined. The development of InGaAs/InAlAs MODFETs is reviewed. Future research in GaAs and InP solid-state technology is discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; reviews; solid-state microwave circuits; solid-state microwave devices; III-V semiconductors; InGaAs-InAlAs devices; InP; MODFET; USA research; microwave circuits; microwave devices; millimeter-wave circuits; millimeter-wave devices; History; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFET circuits; Microwave circuits; Microwave devices; Millimeter wave circuits; Millimeter wave devices; Millimeter wave technology;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147432
