• DocumentCode
    3552428
  • Title

    Low temperature deposition of SiO2 on InP substrates by DECR PECVD

  • Author

    Plais, F. ; Agius, B. ; Proust, N. ; Cassette, S. ; Ravel, G. ; Puech, M.

  • Author_Institution
    Inst. Univ. de Technol., Univ. Paris Sud, Orsay, France
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    547
  • Lastpage
    550
  • Abstract
    The low temperature deposition of SiO2 thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO2 thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO2-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination
  • Keywords
    III-V semiconductors; X-ray photoelectron spectra; indium compounds; interface electron states; interface structure; metal-insulator-semiconductor structures; plasma CVD; semiconductor-insulator boundaries; silicon compounds; DECR PECVD; InP substrates; MIS C-V characteristics; SiO2-InP interface chemistry; deep depletion regime; fixed charge; interface state density; interfacial substrate oxide; low frequency dispersion; low temperature deposition; Chemicals; Chemistry; Density measurement; Dispersion; Frequency; Indium phosphide; Spectroscopy; Sputtering; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147435
  • Filename
    147435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552428