DocumentCode
3552476
Title
A doubly-tuned coupled resonant gate transistor
Author
Nathanson, H.C. ; Davis, J.R. ; Newell, W.E.
Volume
12
fYear
1966
fDate
1966
Firstpage
40
Lastpage
42
Abstract
Singly resonant silicon tuning transistors have been reported. Multiresonant mechanical structures, properly constructed, can result in filters with flat passband and steep rejection slopes. We report a batch-fabricated twin cantilever RGT containing a coupling web near the clamped end. Under one beam is the electrostatic input electrode; under the other beam is the channel of the MOS detector. The beams can vibrate collectively in two modes. If the web width is adjusted properly, the two mode frequencies will be about fo/Q apart resulting in approximately flat doubly-tuned bandpass properties.
Keywords
Bandwidth; Electrostatics; Frequency; Information filtering; Information filters; Laboratories; Optical coupling; Passband; Resonance; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1966 International
Type
conf
DOI
10.1109/IEDM.1966.187664
Filename
1474503
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