• DocumentCode
    3552476
  • Title

    A doubly-tuned coupled resonant gate transistor

  • Author

    Nathanson, H.C. ; Davis, J.R. ; Newell, W.E.

  • Volume
    12
  • fYear
    1966
  • fDate
    1966
  • Firstpage
    40
  • Lastpage
    42
  • Abstract
    Singly resonant silicon tuning transistors have been reported. Multiresonant mechanical structures, properly constructed, can result in filters with flat passband and steep rejection slopes. We report a batch-fabricated twin cantilever RGT containing a coupling web near the clamped end. Under one beam is the electrostatic input electrode; under the other beam is the channel of the MOS detector. The beams can vibrate collectively in two modes. If the web width is adjusted properly, the two mode frequencies will be about fo/Q apart resulting in approximately flat doubly-tuned bandpass properties.
  • Keywords
    Bandwidth; Electrostatics; Frequency; Information filtering; Information filters; Laboratories; Optical coupling; Passband; Resonance; Structural beams;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1966 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1966.187664
  • Filename
    1474503