• DocumentCode
    3552590
  • Title

    Implantation damage in InP: thermal stability effects

  • Author

    Goltzené, A. ; Meyer, B. ; Schwab, C.

  • Author_Institution
    Univ. Louis Pasteur, Strasbourg, France
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    664
  • Lastpage
    667
  • Abstract
    The decay of fast-neutron-induced Vp and P In defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450°C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the PIn0%+ midgap level is observed
  • Keywords
    Fermi level; III-V semiconductors; annealing; indium compounds; ion beam effects; ion implantation; neutron effects; paramagnetic resonance of defects; vacancies (crystal); 450 C; Fermi level pinning; III-V semiconductor; InP; electron paramagnetic resonance; fast neutron induced damage; ion implantation damage simulation; lattice damage removal; optimum temperature; thermal isochronal anneals; thermal stability effects; Annealing; Electrons; Heat treatment; Indium phosphide; Lattices; Monitoring; Neutrons; Paramagnetic resonance; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147462
  • Filename
    147462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552590