• DocumentCode
    3552744
  • Title

    A P-I-N photovoltaic cell for thermo-photo-voltaic use

  • Author

    Schwartz, R.J. ; Kim, Chee Wee

  • Volume
    13
  • fYear
    1967
  • fDate
    1967
  • Firstpage
    142
  • Lastpage
    142
  • Abstract
    Germanium P-I-N photovoltaic cells, with active areas of 1.1 cm2, for use at the high power densities encountered in thermo-photo-voltaic energy conversion systems have been analyzed, fabricated, and tested. This structure has interdigitated contacts located on the unilluminated side of the device to prevent optical masking. Junctions were alloyed at low temperatures (430°C) in order to preserve the free carrier lifetime of the intrinsic region.
  • Keywords
    Aerospace materials; Circuit testing; Coaxial components; Electrodes; Libraries; Lighting; PIN photodiodes; Photovoltaic cells; Pulse measurements; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1967 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1967.187905
  • Filename
    1474986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552744