Abstract :
Since the introduction of the silicon planar technology, germanium devices have gradually been replaced in the electronics field. This is mainly due to the lack of a germanium planar technology attributable to, among other reasons, the lack of a stable self-protective oxide on germanium. With the advent of insulator or oxide technologies, a germanium planar technology has been developed The technology has been proven to be parallel to that of silicon in its potential for fabricating diodes, transistors, as well as integrated circuits. However, this paper shall describe its utilization in fabricating ultra-high speed devices and integrated circuits. Because of higher mobilities of both electrons and holes in germanium than that in silicon, higher frequency or speed performances with germanium devices than that with silicon devices have been expected and realized.
