DocumentCode
3552886
Title
High speed, high voltage NPN core driver transistor for hybrid technology
Author
Gates, H.R. ; Gokhale, B.V.
Author_Institution
International Business Machines Corporation, Hopewell Junction, N. Y.
Volume
14
fYear
1968
fDate
1968
Firstpage
70
Lastpage
70
Abstract
A transistor capable of switching 1.2 amp in less than 10 ns has been developed for application in Memory drive circuits packaged using hybrid technology. The transistor was designed in glassed-chip form for high volume automatic handling, testing, and mounting equipment. One of the design goals was achievement of reliability without additional hermetic seals.
Keywords
Driver circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1968 International
Type
conf
DOI
10.1109/IEDM.1968.187999
Filename
1475524
Link To Document