Low noise x-band Schottky barrier video detector diode

Point contact and conventionally fabricated oxide-passivated silicon Schottky barrier diodes are characterized by large amounts of excess noise at video frequencies. This noise usually severely degrades the sensitivity of these diodes as video detectors. The requirement for high detection sensitivities and low noise has led to the use of tunnel and back diodes in many detector applications, despite some inherent disadvantages such as low video resistance and poor resistance to accidental burnout. The purpose of the work to be described here was to develop an oxide-passivated Schottky barrier doide with no excess noise, suitable for use as a Video detector at 10 GHz.