DocumentCode
3553020
Title
Dielectric-surface-loaded GaAs bulk devices
Author
Kataoka, S. ; Tateno, H. ; Kawashima, Mitsumasa
Volume
15
fYear
1969
fDate
1969
Firstpage
42
Lastpage
44
Abstract
So far most of the work on GaAs bulk devices seems to have been concentrated on a configuration of bare GaAs with two ohmic contacts, which is essentially based on a one-dimensional effect. The purpose of this paper is to introduce new physical phenomena, electrical characteristics and device performances of a dielectric-surface-load GaAs bulk device. Theory and experimental results are given, which are based on a two-dimensional effect and exhibit unique functions.
Keywords
Dielectric devices; Electric resistance; Frequency; Gallium arsenide; Geometry; Gunn devices; Nonuniform electric fields; Smoothing methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188104
Filename
1475985
Link To Document