• DocumentCode
    3553061
  • Title

    Fabrication of vertical PNP´s NPN´s, and N-channel epitaxial JFET´s in a monolithic substrate

  • Author

    Beasom, James D.

  • Author_Institution
    Radiation, Inc., Melbourne, Fla.
  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    84
  • Lastpage
    84
  • Abstract
    It is possible to build high performance PNP´s NPN´s, and N-channel epitaxial JFET´s in dielectrically isolated material. The material is double poly type DI, made from P type substrates, into which N+buried layers are diffused in NPN islands. A N type epitaxial layer which is the top layer in the finished material, is deposited on the P substrate.
  • Keywords
    Fabrication; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1969.188141
  • Filename
    1476022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553061