Computer simulation of large-signal characteristics of an electron-beam-excited semiconductor

A computer program has been developed that permits detailed calculations of the electrical output and corresponding internal effects in the operation of an electron-beam-excited semiconductor device. The computer analysis complements the simple analytical treatment of target operation previously available, and makes possible the evaluation of high-level target operation with any or all of the following effects: (1) arbitrary input waveform, (2) arbitrary pair creating profile, (3) operation where electrons and holes contribute significantly to the target current, (4) non-constant carrier velocity, (5) arbitrary profile of drift region doping, and (6) non-resistive load impedance. These effects often appear in practical target design, especially for high-current, picosecond-rise-time amplifying devices.