DocumentCode
3553264
Title
Properties of double heterostructure injection lasers: Continuous room-temperature operation
Author
Panish, M.B. ; Hayashi, Isao ; Reinhart, F.K.
Volume
16
fYear
1970
fDate
1970
Firstpage
122
Lastpage
122
Abstract
Recently we prepared double heterostructure (DH) injection lasers that were the first junction lasers to operate continuously at and above 300°K. The lasers are multilayer structures of Alx Ga1-x As and GaAs that have the wider-gap material on both sides of a thin layer of the narrower-gap material and that, for CW room-temperature operation, were bonded onto diamond heat sinks. At 300°K the best DH Fabry-Perot lasers have lower threshold current densities
A/cm2) than the best single heterostructure (SH) lasers (∼ 8000 A/cm2) or the best homostructure lasers (
kA/cm2). This results from improvement in optical and carrier confinement, and, in fact, passive guiding has been observed in active regions of the DH laser.
A/cm2) than the best single heterostructure (SH) lasers (∼ 8000 A/cm2) or the best homostructure lasers (
kA/cm2). This results from improvement in optical and carrier confinement, and, in fact, passive guiding has been observed in active regions of the DH laser.Keywords
Bonding; DH-HEMTs; Fabry-Perot; Gallium arsenide; Heat sinks; Laboratories; Nonhomogeneous media; Optical materials; Telephony; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1970 International
Type
conf
DOI
10.1109/IEDM.1970.188310
Filename
1476422
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