• DocumentCode
    3553264
  • Title

    Properties of double heterostructure injection lasers: Continuous room-temperature operation

  • Author

    Panish, M.B. ; Hayashi, Isao ; Reinhart, F.K.

  • Volume
    16
  • fYear
    1970
  • fDate
    1970
  • Firstpage
    122
  • Lastpage
    122
  • Abstract
    Recently we prepared double heterostructure (DH) injection lasers that were the first junction lasers to operate continuously at and above 300°K. The lasers are multilayer structures of AlxGa1-xAs and GaAs that have the wider-gap material on both sides of a thin layer of the narrower-gap material and that, for CW room-temperature operation, were bonded onto diamond heat sinks. At 300°K the best DH Fabry-Perot lasers have lower threshold current densities (J th \\approx 1600-3000 A/cm2) than the best single heterostructure (SH) lasers (∼ 8000 A/cm2) or the best homostructure lasers ( \\sim 20-30 kA/cm2). This results from improvement in optical and carrier confinement, and, in fact, passive guiding has been observed in active regions of the DH laser.
  • Keywords
    Bonding; DH-HEMTs; Fabry-Perot; Gallium arsenide; Heat sinks; Laboratories; Nonhomogeneous media; Optical materials; Telephony; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1970 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1970.188310
  • Filename
    1476422