• DocumentCode
    3553284
  • Title

    Low-threshold-voltage radiation-resistant CMNOS arrays

  • Author

    Cricchi, J.R. ; Ferber, R.R.

  • Author_Institution
    Westinghouse Defense and Space Center, Baltimore, Md.
  • Volume
    16
  • fYear
    1970
  • fDate
    1970
  • Firstpage
    142
  • Lastpage
    142
  • Abstract
    Low-threshold-voltage, radiation-resistant complementary metal-nitride-oxide-semiconductor (CMNOS) arrays have been constructed utilizing a multilayer nitrid-oxide gate insulator. Both the n- and p-channel CMNOS devices havre threshold voltages that are typically 0.5 to 0.9 V. This low threshold permits operation of the arrays with a 5-volt power supply providing very low power dissipation and low insulator electric fields.
  • Keywords
    FETs; Insulation; Logic arrays; Metal-insulator structures; Nonhomogeneous media; Power dissipation; Power supplies; Silicon; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1970 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1970.188328
  • Filename
    1476440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553284