Ion implantation of boron and phosphorus in the fabrication of silicon diode array camera targets

Experimental results are presented which illustrate two separate applications of ion implantation to the fabrication of silicon targets. In the first application, targets are successfully made using an implanted predeposition substituted for a standard diffused predeposition to form the diodes. The targets are characterized by dark currents <10nA at 12 volts target bias and defective diodes per target (video defects). The dose may be varied from cm^-2to cm^-2with no observed change in dark current. At 10¹⁴cm^-2the dark current is increased.