DocumentCode
3553490
Title
S-Band EBID amplifier
Author
MacMaster, G. ; Dudley, K.
Author_Institution
Raytheon Company, Waltham, Massachusetts
Volume
18
fYear
1972
fDate
1972
Firstpage
44
Lastpage
44
Abstract
A prototype microwave S-band amplifier utilizing Electron Beam Irradiated Diodes (EBID) has been built and evaluated. The amplifier consists of an electron beam forming and modulating structure, a high voltage accelerating region, a reverse bias silicon diode target section, and an output circuit. A helix was designed for optimum velocity modulation of the electron beam at a beam potential of 1 kv. The low beam velocity allows for a long interaction time in a relatively short helix. A subsequent post acceleration region provides a bombardment potential of 10 kv for the EBID diode. Hot test results of the EBID amplifier showed that the velocity modulation of the electron beam current was better than 80%.
Keywords
Acceleration; Circuits; Diodes; Electron beams; Microwave amplifiers; Optical modulation; Prototypes; Silicon; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Type
conf
DOI
10.1109/IEDM.1972.249274
Filename
1477097
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