GaAsP and GaAlAs monolithic cross-bar displays

Two types of applications need cross-bar structures, alphanumeric displays and panels. When the total number or the density of electroluminescent points is high it is necessary to use monolithic crystals, containing for example, 5 × 7 or 8 × 8 integrated points. Although others have proposed devices, using localized liquid-phase epitaxy of GaAs or of red GaP, this paper presents a new planar structure, similar to Si bipolar integrated circuits. It is based on either GaAsP or GaAlAs, which are direct band gap materials, non-transparent to their own radiation, and thus allow localization of the photon emitting areas.