S-Band bulk silicon BARITT diode

The feasibility of fabricating a high quality S-band Baritt diode of bulk grown silicon has been established. Experimental Pt-n-Pt diodes were constructed with 5 mW output operating at 70 volts with a load efficiency of more than 2%. A special feature of these diodes is their operation at very low current densities (≈ 2A/cm²). These diodes have the low noise properties characteristic of the BARITT diode and appear to be especially suitable for low drain local oscillator applications and as sources in low power Doppler radars, such as Intrusion Alarms. The fabricating techniques are readily adapted to produce p⁺nn⁺and n⁺p n⁺diodes as well as MSM types.